The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jan. 11, 2008
Kurt H. Junker, Austin, TX (US);
Paul A. Grudowski, Austin, TX (US);
Xiang-zheng BO, Austin, TX (US);
Tien Ying Luo, Beacon, NY (US);
Kurt H. Junker, Austin, TX (US);
Paul A. Grudowski, Austin, TX (US);
Xiang-Zheng Bo, Austin, TX (US);
Tien Ying Luo, Beacon, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate () and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer () of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer () of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.