Xiang-Zheng Bo

Title: Innovations by Xiang-Zheng Bo in Semiconductor Technology

Introduction

Xiang-Zheng Bo is a notable inventor based in Austin, TX (US), recognized for his contributions to semiconductor technology. He has developed innovative methods that enhance the performance and reliability of semiconductor devices. His work is particularly significant in the field of multilayer silicon nitride deposition.

Latest Patents

Xiang-Zheng Bo holds a patent for a method titled "Multilayer silicon nitride deposition for a semiconductor device." This patent outlines a comprehensive process that includes several steps: providing a semiconductor structure equipped with a gate and a channel region, depositing a first sub-layer of a first stressor material containing silicon-nitrogen bonds, curing the first stressor material through exposure to a radiation source, depositing a second sub-layer of a second stressor material, and curing the second sub-layer through exposure to a radiation source. This innovative approach imparts tensile stress to the semiconductor structure, which is crucial for improving device performance. He has 1 patent to his name.

Career Highlights

Xiang-Zheng Bo is currently employed at Freescale Semiconductor, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced materials and methods that are essential for modern electronic devices.

Collaborations

Throughout his career, Xiang-Zheng Bo has collaborated with several esteemed colleagues, including Kurt H Junker and Paul Grudowski. These collaborations have fostered an environment of innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

Xiang-Zheng Bo's contributions to the field of semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work at Freescale Semiconductor, Inc. continues to influence the development of high-performance electronic devices.