Freescale Semiconductor,inc.

Xiang-Zheng Bo

Paul Grudowski

Kurt H Junker

Tien Ying Luo

A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate () and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer () of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer () of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

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Austin, TX, United States of America

Xiang-Zheng Bo