The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Feb. 16, 2007
Douglas M. Reber, St. Ismier, FR;
Mark D. Hall, Austin, TX (US);
Kurt H. Junker, Austin, TX (US);
Kyle W. Patterson, Froges, FR;
Tab Allen Stephens, Austin, TX (US);
Edward K. Theiss, Cedar Park, TX (US);
Srikanteswara Dakshiina-murthy, Wappingers Falls, NY (US);
Marilyn Irene Wright, Sunnyvale, CA (US);
Douglas M. Reber, St. Ismier, FR;
Mark D. Hall, Austin, TX (US);
Kurt H. Junker, Austin, TX (US);
Kyle W. Patterson, Froges, FR;
Tab Allen Stephens, Austin, TX (US);
Edward K. Theiss, Cedar Park, TX (US);
Srikanteswara Dakshiina-Murthy, Wappingers Falls, NY (US);
Marilyn Irene Wright, Sunnyvale, CA (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.