The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Sep. 14, 2007
Kurt H. Junker, Austin, TX (US);
Tien-ying Luo, Beacon, NY (US);
Dina H. Triyoso, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of forming a semiconductor device includes forming a high dielectric constant material over a semiconductor substrate, forming a conductive material over the high dielectric constant material, and performing an anneal in a non-oxidizing ambient using ultraviolet radiation to remove defects in the high dielectric constant material. Examples of a non-oxidizing ambient include for example nitrogen, deuterium, a deuterated forming gas (N/D), helium, argon or a combination of any two or more of these. Additional anneals using ultraviolet radiation may be performed. These additional anneals may occur in non-oxidizing or oxidizing ambients.