The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Nov. 12, 2004
Jin Miao Shen, Austin, TX (US);
Brian J. Fisher, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Kurt H. Junker, Austin, TX (US);
Vikas R. Sheth, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Jin Miao Shen, Austin, TX (US);
Brian J. Fisher, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Kurt H. Junker, Austin, TX (US);
Vikas R. Sheth, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a semiconductor device () includes forming an organic anti-reflective coating (OARC) layer () over the semiconductor device (). A tetra-ethyl-ortho-silicate (TEOS) layer () is formed over the OARC layer (). The TEOS layer () is exposed to oxygen-based plasma at a temperature of at most about 300 degrees Celsius. In an alternative embodiment, the TEOS layer () is first exposed to a nitrogen-based plasma before being exposed to the oxygen-based plasma. A photoresist layer () is formed over the TEOS layer () and patterned. By applying oxygen based plasma and nitrogen based plasma to the TEOS layer () before applying photoresist, pattern defects are reduced.