The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2007
Filed:
Sep. 20, 2004
Applicants:
Peter L. G. Ventzek, Austin, TX (US);
Kurt Junker, Austin, TX (US);
Marius Orlowski, Austin, TX (US);
Inventors:
Peter L. G. Ventzek, Austin, TX (US);
Kurt Junker, Austin, TX (US);
Marius Orlowski, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a dielectric layer is disclosed herein. In accordance with the method, a first material is provided () which comprises a suspension of nanoparticles in a liquid medium. A dielectric layer is then formed () on the substrate from the suspension through an evaporative process.