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Marius K Orlowski

This inventor holds 71 USPTO granted patents and 4 published patent applications, primarily in Transistor Technology (CPC class 437 ). Top assignees: Freescale Semiconductor,inc., Motorola Corporation, Other. Active years: 1993-2014.

USPTO Granted Patents = 71 (Patent Applications = 4)

% Patents Active = 56.3

Average Co-Inventor Count = 2.2

ph-index = 18

Forward Citations = 1,167(Granted Patents)

Forward Citations (Not Self Cited) = 1,155(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

57 out of 5,491

Freescale Semiconductor,inc.

1 out of 834,411

Other

patents

Years Active: 1993-2014

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Areas of Expertise:

Transistor

FinFET

Nano-Crystal Gates

Single Transistor Memory Cell

Semiconductor Fabrication

Charge Storage Structure

Lateral Epitaxial Overgrowth

Mobility Enhancement

Multi-Channel Structure

Silicon Germanium

Stress Absorbent Structures

Vertical Channel Region

71 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8633515 - Transistors with immersed contacts (2014-01-21),

2. 8314448 - Transistors with immersed contacts (2012-11-20),

3. 7986006 - Single transistor memory cell with reduced recombination rates (2011-07-26),

4. 7968394 - Transistor with immersed contacts and methods of forming thereof (2011-06-28),

5. 7939412 - Process for forming an electronic device including a fin-type transistor structure (2011-05-10),

6. 7932189 - Process of forming an electronic device including a layer of discontinuous storage elements (2011-04-26),

7. 7928502 - Transistor devices with nano-crystal gate structures (2011-04-19),

8. 7872311 - Method and apparatus for mobility enhancement in a semiconductor device (2011-01-18),

9. 7811891 - Method to control the gate sidewall profile by graded material composition (2010-10-12),

10. 7781840 - Semiconductor device structure (2010-08-24),

11. 7772584 - Laterally grown nanotubes and method of formation (2010-08-10),

12. 7723805 - Electronic device including a fin-type transistor structure and a process for forming the electronic device (2010-05-25),

13. 7700438 - MOS device with nano-crystal gate structure (2010-04-20),

14. 7683443 - MOS devices with multi-layer gate stack (2010-03-23),

15. 7629220 - Method for forming a semiconductor device and structure thereof (2009-12-08),

Certainly! Here is the article about inventor Marius K Orlowski:

Title: Marius K Orlowski: Pioneering Innovator in Semiconductor Technology

Introduction:

Marius K Orlowski, a distinguished inventor based in Austin, TX, has significantly impacted the field of semiconductor technology with his prolific contributions. With an impressive portfolio of 71 patents to his name, Orlowski continues to push boundaries and drive advancements in the industry.

Latest Patents:

Among his latest patents is the groundbreaking invention of "Transistors with Immersed Contacts." These semiconductor structures feature innovative designs with first and second current electrode regions, channel regions within fin structures, and efficient carrier transport mechanisms. Orlowski's work exemplifies cutting-edge solutions for enhancing semiconductor performance.

Career Highlights:

Throughout his career, Marius K Orlowski has made significant strides in the semiconductor sector. Having worked with renowned companies such as Freescale Semiconductor, Inc. and Motorola Corporation, he has honed his expertise and spearheaded projects that have garnered recognition for their ingenuity and technical sophistication.

Collaborations:

Orlowski's collaborative efforts have been instrumental in driving innovation forward. Working alongside esteemed colleagues like Chun-Li Liu and James David Burnett, he has fostered a dynamic environment of knowledge exchange and creative problem-solving. These collaborations have led to the development of groundbreaking technologies that address pressing industry challenges.

Conclusion:

In conclusion, Marius K Orlowski stands out as a visionary inventor whose pioneering work in semiconductor technology has left an indelible mark on the industry. Through his relentless pursuit of innovation and dedication to excellence, Orlowski continues to inspire and shape the future of semiconductor technology.

Profile summary based on public USPTO records.

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