The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Jan. 10, 2006
Marius K. Orlowski, Austin, TX (US);
James D. Burnett, Austin, TX (US);
Marius K. Orlowski, Austin, TX (US);
James D. Burnett, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An electronic device can include an insulating layer and a fin-type transistor structure. The fin-type structure can have a semiconductor fin and a gate electrode spaced apart from each other. A dielectric layer and a spacer structure can lie between the semiconductor fin and the gate electrode. The semiconductor fin can include channel region including a portion associated with a relatively higher Vlying between a portion associated with a relatively lower Vand the insulating layer. In one embodiment, the supply voltage is lower than the relatively higher Vof the channel region. A process for forming the electronic device is also disclosed.