The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Jan. 26, 2007
Tushar P. Merchant, Austin, TX (US);
Chun-li Liu, Mesa, AZ (US);
Ramachandran Muralidhar, Austin, TX (US);
Marius K. Orlowski, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Matthew Stoker, Austin, TX (US);
Tushar P. Merchant, Austin, TX (US);
Chun-Li Liu, Mesa, AZ (US);
Ramachandran Muralidhar, Austin, TX (US);
Marius K. Orlowski, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Matthew Stoker, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon over the discontinuous storage elements. In one embodiment, the process includes oxidizing at least substantially all of the layer. In another embodiment, the process includes forming the layer using a substantially hydrogen-free silicon precursor material and oxidizing at least substantially all of the layer.