The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Jun. 30, 2006
Marius Orlowski, Austin, TX (US);
Marius Orlowski, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A non-planar semiconductor device () starts with a silicon fin (). A source of germanium (e.g.) is provided to the fin (). Some embodiments may use deposition to provide germanium; some embodiments may use ion implantation () to provide germanium; other methods may also be used to provide germanium. The fin () is then oxidized to form a silicon germanium channel region in the fin (). In some embodiments, the entire fin () is transformed from silicon to silicon germanium. One or more fins () may be used to form a non-planar semiconductor device, such as, for example, a FINFET, MIGFET, Tri-gate transistor, or multi-gate transistor.