The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Sep. 18, 2007
Marius K. Orlowski, Austin, TX (US);
Suresh Venkatesan, Austin, TX (US);
Marius K. Orlowski, Austin, TX (US);
Suresh Venkatesan, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method and apparatus is presented that provides mobility enhancement in the channel region of a transistor. In one embodiment, a channel region () is formed over a substrate that is bi-axially stressed. Source () and drain () regions are formed over the substrate. The source and drain regions provide an additional uni-axial stress to the bi-axially stressed channel region. The uni-axial stress and the bi-axially stress are both compressive for P-channel transistors and tensile for N-channel transistors. Both transistor types can be included on the same integrated circuit.