The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Jul. 10, 2007
Applicants:
Paul A. Grudowski, Austin, TX (US);
Kurt H. Junker, Austin, TX (US);
Thomas J. Kropewnicki, Austin, TX (US);
Andrew G. Nagy, Austin, TX (US);
Inventors:
Paul A. Grudowski, Austin, TX (US);
Kurt H. Junker, Austin, TX (US);
Thomas J. Kropewnicki, Austin, TX (US);
Andrew G. Nagy, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode (); (b) forming a first set of organic spacers () adjacent to said first electrode; (c) depositing a first photo mask () over the structure; and (d) simultaneously removing the first set of organic spacers and the first photo mask.