IDiyas

For the Inventor, By the Inventor

Yokkaichi, Japan

Kazumasa Hiramatsu

USPTO Granted Patents = 15

Average Co-Inventor Count = 4.7

ph-index = 10

Forward Citations = 872(Granted Patents)


Location History:

  • Yakkaichi, JP (2004)
  • Yokkaichi, JP (1990 - 2011)

Company Filing History:

goldMedal6 out of 6,892 
 
Sumitomo Chemical Company, Limited
 patents
silverMedal4 out of 3,077 
 
Toyoda Gosei Co., Ltd.
 patents
bronzeMedal3 out of 218 
 
Mitsubishi Cable Industries, Ltd.
 patents
4. 3 out of 371 
 
Nagoya University
 patents
5. 1 out of 1 
 
Isamu Akasaki
 patent
6. 1 out of 1 
 
Hiroshi Amano
 patent
7. 1 out of 1 
 
Kazumasa Hiramatsu
 patent
8. 1 out of 2,861 
 
Pioneer Electronic Corporation
 patents
9. 1 out of 79 
 
Mie University
 patents
10. 2 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1990-2011

Loading Chart...
15 patents (USPTO):Explore Patents
1. 8053811 - Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element (2011-11-08),
2. 7399687 - Substrate of gallium nitride single crystal and process for producing the same (2008-07-15),
3. 6946308 - Method of manufacturing III-V group compound semiconductor (2005-09-20),
4. 6844574 - III-V compound semiconductor (2005-01-18),
5. 6756246 - Method for fabricating III-V group compound semiconductor (2004-06-29),
6. 6734515 - Semiconductor light receiving element (2004-05-11),
7. 6503610 - Group III-V compound semiconductor and method of producing the same (2003-01-07),
8. 6225650 - GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof (2001-05-01),
9. 5846844 - Method for producing group III nitride compound semiconductor substrates (1998-12-08),
10. 5810925 - GaN single crystal (1998-09-22),
11. 5770887 - Gan single crystal (1998-06-23),
12. 5370738 - Compound semiconductor vapor phase epitaxial device (1994-12-06),
13. 5218216 - Gallium nitride group semiconductor and light emitting diode comprising (1993-06-08),
14. 5122845 - Substrate for growing gallium nitride compound-semiconductor device and (1992-06-16),
15. 4911102 - Process of vapor growth of gallium nitride and its apparatus (1990-03-27),

Title: The Innovative Journey of Kazumasa Hiramatsu

Introduction: Kazumasa Hiramatsu, a pioneering inventor hailing from Yokkaichi, Japan, has made significant contributions to the world of innovations with his groundbreaking ideas and inventions.

Latest Patents: Kazumasa Hiramatsu holds several patents in various fields, showcasing his versatility and creativity in inventing new solutions to complex problems.

Career Highlights: Throughout his illustrious career, Kazumasa Hiramatsu has been recognized for his innovative spirit and dedication to pushing the boundaries of what is possible. His inventions have not only improved existing technologies but have also opened up new avenues for future developments.

Collaborations: Kazumasa Hiramatsu has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work in diverse teams and leverage the expertise of others has been instrumental in the success of his projects.

Conclusion: In conclusion, Kazumasa Hiramatsu stands as a shining example of an inventor whose passion for innovation has led to groundbreaking discoveries. His contributions to the field of inventions continue to inspire and shape the future of technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…