The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Mar. 10, 2000
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Hisai, JP;
Takayoshi Maeda, Nabari, JP;
Yasushi Iyechika, Tsukuba, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Hisai, JP;
Takayoshi Maeda, Nabari, JP;
Yasushi Iyechika, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Osaka, JP;
Abstract
Provided is a III-V compound semiconductor having a layer formed from a first III-V compound semiconductor expressed by the general formula InGaAlN (where 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1), a pattern formed on the layer from a material different not only from the first III-V compound semiconductor but also from a second III-V compound semiconductor hereinafter described, and a layer formed on the first III-V compound semiconductor and the pattern from the second III-V compound semiconductor expressed by the general formula InGaAlN (where 0≦x≦1, 0≦y≦1, 0≦x≦1, x+y+z=1), wherein the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-V compound semiconductor is 700 seconds or less regardless of the direction of X-ray incidence. In the III-V compound semiconductor, which is a high quality semiconductor, the occurrence of low angle grain boundaries is suppressed.