The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Mar. 16, 2001
Kazuyuki Tadatomo, Itami, JP;
Hiroaki Okagawa, Itami, JP;
Youichiro Ohuchi, Itami, JP;
Masahiro Koto, Itami, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Yutaka Hamamura, Yokohama, JP;
Sumito Shimizu, Yokohama, JP;
Other;
Abstract
A semiconductor light receiving element having a light receiving layer ( ) formed from a GaN group semiconductor, and an electrode ( ) formed on one surface of the light receiving layer as a light receiving surface ( ) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode ( ) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface ( ), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface ( ). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer ( ) is a first conductivity type i layer, and the aforementioned electrode ( ) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer ( ).