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For the Inventor, By the Inventor

Itami, Japan

Hiroaki Okagawa

USPTO Granted Patents = 25 

 

Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 487(Granted Patents)


Location History:

  • Itami, JP (1995 - 2009)
  • Amagasaki, JP (2011 - 2013)
  • Ushiku, JP (2012 - 2014)
  • Tokyo, JP (2013 - 2014)
  • Ibaraki, JP (2015)

Company Filing History:

goldMedal14 out of 218 
 
Mitsubishi Cable Industries, Ltd.
 patents
silverMedal10 out of 2,350 
 
Mitsubishi Chemical Corporation
 patents
bronzeMedal1 out of 832,891 
Other
 patents

Years Active: 1995-2015

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25 patents (USPTO):Explore Patents
1. 8946772 - Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element (2015-02-03),
2. 8829778 - White light-emitting semiconductor devices (2014-09-09),
3. 8716728 - Nitride semiconductor light-emitting diode device (2014-05-06),
4. 8581488 - White light-emitting semiconductor devices (2013-11-12),
5. 8455886 - Light emitting device using GaN LED chip (2013-06-04),
6. 8158994 - GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein (2012-04-17),
7. 8158990 - Light emitting device using GaN LED chip (2012-04-17),
8. 8012783 - Semiconductor element and method for manufacturing same (2011-09-06),
9. 7589001 - Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method (2009-09-15),
10. 7504324 - Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method (2009-03-17),
11. 7179667 - Semiconductor base material and method of manufacturing the material (2007-02-20),
12. 7115486 - Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method (2006-10-03),
13. 7053420 - GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof (2006-05-30),
14. 6940098 - Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method (2005-09-06),
15. 6794210 - Method for growing GaN compound semiconductor crystal and semiconductor substrate (2004-09-21),

Title: Innovations of Hiroaki Okagawa in GaN-based Semiconductors

Introduction: Hiroaki Okagawa, based in Itami, Japan, is a notable inventor with an impressive portfolio of 25 patents. His work primarily focuses on innovative technologies in gallium nitride (GaN)-based semiconductors, highlighting his contributions to the field of optoelectronics.

Latest Patents: Okagawa's latest patents include a substrate for epitaxial growth, a process for manufacturing GaN-based semiconductor films, and GaN-based semiconductor light-emitting elements. His invention of a substrate for epitaxial growth features a single crystal part made of a different material from the GaN-based semiconductor, especially in the surface layer. This substrate presents an uneven surface with convex portions arranged strategically for optimal growth, allowing the GaN-based semiconductor crystal to grow effectively. Another significant innovation is a white light-emitting semiconductor device that has enhanced reproducibility of bright red light output. This device combines blue, green, and red light components, utilizing light-emitting semiconductor elements and phosphors for wavelength conversion, achieving an impressive color rendering.

Career Highlights: Okagawa has had a distinguished career, working with prominent organizations such as Mitsubishi Cable Industries, Ltd. and Mitsubishi Chemical Corporation. His experience in these companies has played a vital role in shaping his innovative works and patent applications.

Collaborations: Throughout his career, Okagawa has collaborated with talented individuals in the field, including coworkers Kazuyuki Tadatomo and Yoichiro Ouchi. Their combined expertise has contributed to advancing semiconductor technologies and fostering innovation in the industry.

Conclusion: Hiroaki Okagawa's contributions to GaN-based semiconductor technologies demonstrate his commitment to innovation and excellence. With a robust portfolio of patents and collaborations with industry peers, Okagawa continues to shape the future of optoelectronic devices through his groundbreaking inventions.

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