The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Mar. 13, 2012
Takahide Joichi, Amagasaki, JP;
Hiroaki Okagawa, Amagasaki, JP;
Shin Hiraoka, Amagasaki, JP;
Toshihiko Shima, Amagasaki, JP;
Hirokazu Taniguchi, Amagasaki, JP;
Takahide Joichi, Amagasaki, JP;
Hiroaki Okagawa, Amagasaki, JP;
Shin Hiraoka, Amagasaki, JP;
Toshihiko Shima, Amagasaki, JP;
Hirokazu Taniguchi, Amagasaki, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.