The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Sep. 17, 2001
Hiroaki Okagawa, Itami, JP;
Kazuyuki Tadatomo, Itami, JP;
Yoichiro Ouchi, Itami, JP;
Takashi Tsunekawa, Itami, JP;
Hiroaki Okagawa, Itami, JP;
Kazuyuki Tadatomo, Itami, JP;
Yoichiro Ouchi, Itami, JP;
Takashi Tsunekawa, Itami, JP;
Mitsubishi Cable Industries, Ltd., Amagasaki, JP;
Abstract
As shown in FIG.(), substratehaving a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG.(), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG.(). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.