Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method

Abstract

A growth plane of substrateis processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave partand therefore, a crystal growth occurs only from an upper part of a convex partAs shown in FIG.(), therefore, a crystal unitoccurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex partas a starting point are connected to cover the concavo-convex surface of the substrateleaving a cavityin the concave part, as shown in FIG.(), thereby giving a crystal layerwhereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave parthas a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrateand the crystal layerat the cavity part thereof to give a semiconductor crystal.