The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Oct. 19, 2007
Hiromitsu Kudo, Ushiku, JP;
Hirokazu Taniguchi, Amagasaki, JP;
Hiroaki Okagawa, Ushiku, JP;
Shin Hiraoka, Ushiku, JP;
Takahide Joichi, Ushiku, JP;
Toshihiko Shima, Ushiku, JP;
Hiromitsu Kudo, Ushiku, JP;
Hirokazu Taniguchi, Amagasaki, JP;
Hiroaki Okagawa, Ushiku, JP;
Shin Hiraoka, Ushiku, JP;
Takahide Joichi, Ushiku, JP;
Toshihiko Shima, Ushiku, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
A nitride semiconductor light-emitting diode elementincludes a nitride semiconductor layerhaving a bottom surface and an upper surface and containing a light emitting layerinside, and a supporting substratemade from a metal is bonded to the bottom surface of the nitride semiconductor layer. A light reflecting depression Ato reflect light generated in the light emitting layeris formed in the bottom surface of the nitride semiconductor layer. According to the nitride semiconductor light-emitting diode element, since the light generated from the light emitting layerand propagated in the nitride semiconductor layerin a layer direction is reflected by the light reflecting depression Aand its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layerwithin a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.