The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1990
Filed:
Jan. 26, 1988
Katsuhide Manabe, Ichinomiya, JP;
Nobuo Okazaki, Konan, JP;
Isamu Akazaki, Machida, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Hiroshi Amano, Hamamatsu, JP;
Toyoda Gosei Co., Ltd., Nishikasuga, JP;
Nagoya University, Nagoya, JP;
Abstract
A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (Al.sub.x Ga.sub.1-x N; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows Al.sub.x Ga.sub.1-x N and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type Al.sub.x Ga.sub.1-x N thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the Al.sub.x Ga.sub.1-x N thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.