This inventor holds 4 USPTO granted patents. Top assignees: Toyoda Gosei Co., Ltd., Nagoya University, Aisin Seiki Kabushiki Kaisha. Active years: 1986-1993.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Konan, JP (1986 - 1993)
- Inazawa, JP (1993)
Company Filing History:
4 out of 3,086 
2 out of 371 
1 out of 5,207 
Years Active: 1986-1993
Title: Nobuo Okazaki: Innovator in Gallium Nitride Semiconductor Technology
Introduction
Nobuo Okazaki is a prominent inventor known for his contributions to the field of semiconductor technology. He is based in Konan, Japan, and holds a total of 4 patents. His work primarily focuses on gallium nitride group compound semiconductor devices, which have significant applications in optoelectronics.
Latest Patents
One of Okazaki's latest patents is for a gallium nitride group compound semiconductor laser diode. This innovative device includes at least one pn junction layer situated between an n-type layer and a p-type layer. The n-type layer is composed of a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, where 0 ≤ x ≤ 1 and 0 ≤ y ≤ 1. The p-type layer, which is doped with an acceptor impurity, is created by electron beam irradiating a gallium nitride group compound semiconductor material defined by a similar composition equation. This improved laser diode is capable of emitting light in the visible short wavelength spectrum, including blue, violet, and ultraviolet regions.
Another significant patent involves a gallium nitride group semiconductor and light-emitting diode. In this invention, a thin film of SiO.sub.2 is patterned on an N layer made of N-type Al.sub.x Ga.sub.1-x N. The I-type Al.sub.x Ga.sub.1-x N is selectively grown, forming an active layer of a light-emitting diode. Electrodes are then formed on the I-layer and conductive layer to complete the light-emitting diode structure.
Career Highlights
Throughout his career, Nobuo Okazaki has worked with notable organizations, including Toyoda Gosei Co., Ltd. and Nagoya University. His research and development efforts have significantly advanced the understanding and application of gallium nitride technology in various electronic devices.
Collaborations
Okazaki has collaborated with esteemed colleagues such as Katsuhide Manabe and Hiroshi Amano. Their joint efforts have contributed to the progress in semiconductor research and development.
Conclusion
Nobuo Okazaki's innovative work in gallium nitride semiconductor technology has made a lasting impact on the field. His
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile