Toyoda Gosei Co., Ltd.

Nagoya University

Other

Aisin Seiki Kabushiki Kaisha

Nobuo Okazaki

Katsuhide Manabe

Hiroshi Amano

Kazumasa Hiramatsu

Isamu Akasaki

Kenichi Kazaoka

Takaaki Nakazawa

Kunihiko Nakashima

Isamu Akazaki

A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N (where 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x' Ga.sub.1-x').sub.y' In.sub.1-y' N (where 0.ltoreq.x'.ltoreq.1, 0.ltoreq.y'.ltoreq.1, x=x' or x.noteq.x', and, y=y' or y.noteq.y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.

Gallium nitride group compound semiconductor laser diode

A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.

Gallium nitride group semiconductor and light emitting diode comprising

A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (Al.sub.x Ga.sub.1-x N; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows Al.sub.x Ga.sub.1-x N and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type Al.sub.x Ga.sub.1-x N thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the Al.sub.x Ga.sub.1-x N thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.

Process of vapor growth of gallium nitride and its apparatus

A steering wheel assembly with a centralized control system including terminal component such as an input and output member disposed in a center pad of the steering wheel. In this assembly; the terminal component and a computer for controlling said terminal component are disposed in a center pad of the steering wheel, the terminal component being mounted to the center pad in a selectively exchangeable manner. The terminal component may be formed as an exchangable cassette unit. The terminal component is also provided with a variety of switches and/or accessory equipment to thereby permit the same to be readily replaced with another cassette unit in accordance with driver's demands. Therefore, the improved steering wheel assembly of this invention is convenient and it can promptly and easily respond to the user's demands.

Steering wheel assembly with centralized control system

Growing community of inventors

Konan, Japan

Nobuo Okazaki