The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1993
Filed:
Dec. 20, 1991
Katsuhide Manabe, Ichinomiya, JP;
Nobuo Okazaki, Konan, JP;
Isamu Akasaki, Machida, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Hiroshi Amano, Hamamatsu, JP;
Toyoda Gosei Co., Ltd., Nagoya, JP;
Nagoya University, Nagoya, JP;
Abstract
A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile