The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Mar. 26, 2002
Kazumasa Hiramatsu, Yakkaichi, JP;
Hideto Miyake, Hisai, JP;
Shinya Bohyama, Mie, JP;
Takayoshi Maeda, Nabari, JP;
Yasushi Iyechika, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Osaka, JP;
Abstract
A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor layer formed with a mask layer. The method uses a mixed carrier gas of hydrogen gas and nitrogen gas to control formation of a facet group including at least the {33-62} facet by the regrowth, and conducting the regrowth until a plane parallel to the surface of the first III-V Group compound semiconductor layer is once annihilated, thereby fabricating a III-V Group compound semiconductor having low dislocation density.