Shinya Bohyama

Title: Shinya Bohyama: Innovator in Gallium Nitride Semiconductor Technology

Introduction

Shinya Bohyama is a prominent inventor based in Ichishi-gun, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride (GaN) substrates. With a total of 3 patents to his name, Bohyama's work has the potential to advance the efficiency and performance of electronic devices.

Latest Patents

Bohyama's latest patents include a method for producing an epitaxial substrate with reduced dislocation density. This invention involves a two-step process that utilizes a mask to create openings around points of the crystal, allowing for lateral growth of the III-V group compound semiconductor crystal. The result is an epitaxial substrate characterized by low dislocation density and minimal warp. Another notable patent focuses on the manufacturing method of III-V group compound semiconductors, emphasizing the importance of maintaining a deposition pressure of not less than 800 Torr to enhance crystallinity and reduce defect density.

Career Highlights

Shinya Bohyama is currently employed at Sumitomo Chemical Company, Limited, where he continues to innovate in the semiconductor field. His work has garnered attention for its potential applications in various electronic devices, making him a key figure in the industry.

Collaborations

Bohyama has collaborated with notable colleagues, including Kazumasa Hiramatsu and Hideto Miyake. Their combined expertise contributes to the advancement of semiconductor technologies and the successful development of innovative solutions.

Conclusion

Shinya Bohyama's contributions to gallium nitride semiconductor technology highlight his role as a leading inventor in the field. His patents reflect a commitment to improving the performance of electronic devices through innovative manufacturing processes.