The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Mar. 26, 2003
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Hisai, JP;
Shinya Bohyama, Mie, JP;
Takayoshi Maeda, Nabari, JP;
Yasushi Iyechika, Matsudo, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Hisai, JP;
Shinya Bohyama, Mie, JP;
Takayoshi Maeda, Nabari, JP;
Yasushi Iyechika, Matsudo, JP;
Sumitomo Chemical Company, Limited, Osaka, JP;
Abstract
When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InGaAlN (where 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.