The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2008
Filed:
Mar. 04, 2004
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Hisai, JP;
Shinya Bohyama, Ichishi-gun, JP;
Takayoshi Maeda, Tottori, JP;
Yoshinobu Ono, Tsukuba-gun, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Hisai, JP;
Shinya Bohyama, Ichishi-gun, JP;
Takayoshi Maeda, Tottori, JP;
Yoshinobu Ono, Tsukuba-gun, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Abstract
The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InGaAlN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.