The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Mar. 23, 2001
Applicant:
Inventors:
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Hisai, JP;
Takayoshi Maeda, Nabari, JP;
Yasushi Iyechika, Tsukuba, JP;
Assignee:
Sumitomo Chemical Company, Limited, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 1/00 ; B32B 9/00 ;
U.S. Cl.
CPC ...
C30B 1/00 ; B32B 9/00 ;
Abstract
Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing process using a mask pattern, and threading dislocations in the re-grown layer are terminated by the voids formed on the pattern.