The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Mar. 24, 1998
Kazuyuki Tadatomo, Itami, JP;
Hiroaki Okagawa, Itami, JP;
Youichiro Ohuchi, Itami, JP;
Keiji Miyashita, Itami, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Nobuhiko Sawaki, Nagoya, JP;
Katsunori Yahashi, Yokohama, JP;
Takumi Shibata, Tajimi, JP;
Mitsubishi Cable Industries, Ltd., Hyogo, JP;
Abstract
A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.