The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 1998

Filed:

Feb. 07, 1996
Applicant:
Inventors:

Isamu Akasaki, Nagoya, JP;

Hiroshi Amano, Nagoya, JP;

Kazumasa Hiramatsu, Yokkaichi, JP;

Theeradetch Detchprohm, Nagoya, JP;

Assignees:

Toyoda Gosei Co., Ltd., Nishikasugai-gun, JP;

Isamu Akasaki, Nagoya, JP;

Hiroshi Amano, Nagoya, JP;

Kazumasa Hiramatsu, Yokkaichi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 21 ; 437 84 ; 437 86 ; 437133 ; 437944 ; 437974 ; 117915 ; 117952 ; 148D / ; 148D / ; 148D / ;
Abstract

A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.


Find Patent Forward Citations

Loading…