Theeradetch Detchprohm

Title: Theeradetch Detchprohm: Innovator in Semiconductor Technology

Introduction

Theeradetch Detchprohm is a notable inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the production of group III nitride compound semiconductor substrates. His innovative work has implications for various applications in electronics and optoelectronics.

Latest Patents

Theeradetch Detchprohm holds a patent for a "Method for producing group III nitride compound semiconductor substrates." This patent describes a nitrogen-group III compound semiconductor that satisfies the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, including specific values for x and y. The method involves forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, creating a nitrogen-group III semiconductor layer on this intermediate layer, and then separating the ZnO layer through wet etching.

Career Highlights

Throughout his career, Theeradetch Detchprohm has worked with prominent companies in the semiconductor industry, including Toyoda Gosei Co., Ltd. His expertise and innovative approaches have positioned him as a key figure in advancing semiconductor technologies.

Collaborations

Theeradetch has collaborated with esteemed colleagues such as Isamu Akasaki and Hiroshi Amano. These collaborations have further enriched his work and contributed to the development of cutting-edge semiconductor solutions.

Conclusion

Theeradetch Detchprohm's contributions to semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor in the field. His work continues to impact the industry and pave the way for future innovations.