This inventor holds 45 USPTO granted patents and 3 published patent applications and 3 EPO patents, primarily in Nitride Semiconductor Devices. Top assignees: Toyoda Gosei Co., Ltd., Meijo University, Nagoya University. Active years: 1989-2025. Nobel Prize laureate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Nagoya-shi, Aichi-ken JP (1996)
- Aichi-ken, JP (1997 - 1999)
- Nishi-ku, Nagoya-shi, Aichi-ken, JP (1999)
- Nagoya-shi, Aichi-ken, JP (1994 - 2002)
- Nishi-ku, Nagoya-shi, Aichi, JP (2005)
- Nagoya-shi, Aichi, JP (2010)
- Nagoya, JP (1989 - 2022)
Company Filing History:
15 out of 3,086 
13 out of 48 
5 out of 371 
Years Active: 1989-2025
Areas of Expertise:
Title: Unveiling the Innovations of Isamu Akasaki
Introduction: Isamu Akasaki, a visionary inventor hailing from Nagoya, Japan, has made significant contributions to the field of semiconductor technology, boasting an impressive portfolio of 44 patents. His groundbreaking work has revolutionized the world of semiconductor light-emitting devices, paving the way for enhanced efficiency and performance in this crucial industry.
Latest Patents:
1. Semiconductor light emitting device and manufacturing method of semiconductor light emitting device: This patent introduces a semiconductor light emitting device with a unique structure, including a growth substrate, pillar-shaped semiconductor layer, buried semiconductor layer, n-type nanowire layer, active layer, p-type semiconductor layer, and tunnel junction layer. The innovation lies in the removed region within the pillar-shaped semiconductor layer, enhancing the device's functionality.
2. Group III nitride semiconductor light-emitting device and production method therefor: This patent focuses on improving the light extraction efficiency of Group III nitride semiconductor light-emitting devices while mitigating polarization effects caused by Al composition variation. By strategically designing the p-type contact layers with varying Al composition rates, the efficiency and performance of the device are significantly enhanced.
Career Highlights: Isamu Akasaki has left an indelible mark on the semiconductor industry through his tenure at reputable companies such as Toyoda Gosei Co., Ltd. His innovative spirit and dedication to enhancing semiconductor technology have led to numerous breakthroughs that have reshaped the landscape of the industry.
Collaborations: Throughout his illustrious career, Isamu Akasaki has collaborated with esteemed professionals in the field, including Hiroshi Amano and Norikatsu Koide. Together, they have synergized their expertise to push the boundaries of semiconductor technology and drive innovation forward.
Conclusion: Isamu Akasaki's relentless pursuit of innovation and unwavering commitment to excellence have positioned him as a trailblazer in the semiconductor industry. His patents and collaborations reflect a legacy of transformative contributions that continue to inspire and shape the future of semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile