The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Feb. 26, 2007
Applicants:
Satoshi Kamiyama, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Motoaki Iwaya, Inazawa, JP;
Isamu Akasaki, Nagoya, JP;
Hideki Kasugai, Ama-gun, JP;
Inventors:
Satoshi Kamiyama, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Motoaki Iwaya, Inazawa, JP;
Isamu Akasaki, Nagoya, JP;
Hideki Kasugai, Ama-gun, JP;
Assignee:
Meijo University, Nagoya-shi, Aichi-ken, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.