Nagoya, Japan

Motoaki Iwaya

This inventor holds 19 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Nitride Semiconductor Technology. Top assignees: Meijo University, Asahi Kasei Kabushiki Kaisha, Toyoda Gosei Co., Ltd.. Active years: 2009-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Motoaki Iwaya. Retrieved from https://idiyas.com/inventor/motoaki-iwaya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 73.7


Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 38(Granted Patents)


Location History:

  • Inazawa, JP (2009 - 2011)
  • Aichi, JP (2015)
  • Tokyo, JP (2019)
  • Nagoya, JP (2016 - 2024)

Company Filing History:


Years Active: 2009-2025

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Areas of Expertise:
Nitride Semiconductor
Light Emitting Device
Semiconductor Manufacturing
Group III Nitride
Multilayer Film Reflector
Ultraviolet Ray Receiving Element
Porous SiC
n-p-n Device
Semiconductor Substrate
Light Emitting Diode
Periodic Gain Active Layers
Two-Light Flux Interference
19 patents (USPTO):Explore Patents

Title: **Motoaki Iwaya: Innovator in Nitride Semiconductor Technology**

Introduction

Motoaki Iwaya, based in Nagoya, Japan, is a prominent inventor known for his contributions to the field of nitride semiconductors. With an impressive portfolio of 18 patents, Iwaya has been at the forefront of innovations that enhance the performance and reliability of semiconductor devices, particularly in high-current applications.

Latest Patents

Among his latest patents, Iwaya has developed a range of nitride semiconductor elements designed to withstand high current densities without breakdown. One notable patent features a nitride semiconductor element comprising an active layer, an electron block layer, an AlGaN layer, and a cover layer. This innovative design incorporates protrusions on the AlGaN layer, designed to manage electrical performance effectively.

Another significant patent involves a semiconductor light-emitting device, which includes a growth substrate and a unique pillar-shaped semiconductor layer. This layer consists of an n-type nanowire core surrounded by an active layer and a p-type semiconductor layer. The production methodology outlined in this patent showcases advanced techniques to enhance the efficiency and output of semiconductor light-emitting devices.

Career Highlights

Motoaki Iwaya's career has been marked by his association with reputable institutions, including Meijo University and Asahi Kasei Corporation. His work in these organizations has not only contributed to his personal growth but has also significantly advanced the field of semiconductor technology.

Collaborations

Throughout his career, Iwaya has collaborated with other esteemed inventors, including Isamu Akasaki and Satoshi Kamiyama. These collaborations have fostered an environment of innovation, leading to breakthroughs in semiconductor designs and applications.

Conclusion

In conclusion, Motoaki Iwaya stands out as an influential inventor in the semiconductor domain. His inventive solutions in nitride semiconductor elements and light-emitting devices not only reflect his expertise but also mark significant advancements in technology that will benefit many sectors. As Iwaya continues to push the boundaries of semiconductor research and development, his contributions will undoubtedly have lasting impacts on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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