The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Sep. 09, 2020
Koito Manufacturing Co., Ltd., Tokyo, JP;
Meijo University, Nagoya, JP;
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Satoshi Kamiyama, Nagoya, JP;
Tetsuya Takeuchi, Nagoya, JP;
Motoaki Iwaya, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Lu Weifang, Nagoya, JP;
Naoki Sone, Shizuoka, JP;
Kazuyoshi Iida, Kiyosu, JP;
Ryo Nakamura, Kiyosu, JP;
Masaki Oya, Kiyosu, JP;
KOITO MANUFACTURING CO., LTD., Tokyo, JP;
MEIJO UNIVERSITY, Aichi, JP;
TOYODA GOSEI CO., LTD., Kiyosu, JP;
Abstract
Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.