For the Inventor, By the Inventor

Enter assignee name

Kyoto Institute of Technology

USPTO Granted Patents = 70

EPO Patents = 1

Forward Citations = 82

Loading Chart...

Loading Chart...

152 inventors (with patents filed for the assignee):

Masahiro Yoshimoto (11 out of 11 patents)

Tatsuji Nagaoka (10 out of 27 patents)

Hiroyuki Nishinaka (10 out of 10 patents)

4. Yoichi Kumada (10 out of 10 patents)

5. Yasuhiro Awatsuji (6 out of 6 patents)

6. Yoshiharu Kimura (6 out of 19 patents)

7. Tetsuya Ueda (5 out of 7 patents)

8. Tatsuki Tahara (5 out of 6 patents)

9. Michimasa Kishimoto (5 out of 5 patents)

10. Daisuke Tahara (3 out of 3 patents)

11. Seiichi Uchimura (3 out of 6 patents)

12. Kyoko Hamasaki (3 out of 3 patents)

13. Hideki Yamane (3 out of 5 patents)

14. Kohei Oda (3 out of 4 patents)

15. Rei Takahashi (2 out of 6 patents)

Core Competencies:

Solid Electrolyte Membrane

Wafer Processing

Gait Motion Assistance

Semiconductor Manufacturing

Film Formation Apparatus

Digital Holography

Microwave Resonator

Gas Separation Membrane

Tactile Sensors

Antibody Immobilization

Photonic Crystal Laser

Bio-Based Coatings

70 patents: Sort by Forward Citations

1. 12195498 - Separating agent (2025-01-14),

2. 12103948 - Separating agent (2024-10-01),

3. 12087911 - Method of manufacturing a solid electrolyte membrane (2024-09-10),

4. 11802348 - Method for selectively coating electronic component with coating material, and method for manufacturing electronic component (2023-10-31),

5. 11699600 - Wafer processing apparatus and method for processing wafer (2023-07-11),

6. 11534791 - Mist generator, film formation apparatus, and method of forming film using the film formation apparatus (2022-12-27),

7. 11534359 - Actuator-equipped knee ankle foot orthosis (2022-12-27),

8. 11529281 - Gait motion assisting apparatus (2022-12-20),

9. 11515146 - Method of forming gallium oxide film (2022-11-29),

10. 11443944 - Method of growing semiconductor layers, method of manufacturing semiconductor device, and method of growing balk crystal (2022-09-13),

11. 11424322 - Semiconductor device and method of manufacturing the same (2022-08-23),

12. 11373864 - Method of forming oxide film, method of manufacturing semiconductor device, and apparatus configured to form oxide film (2022-06-28),

13. 11371161 - Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film (2022-06-28),

14. 11285458 - Separating agent (2022-03-29),

15. 11280023 - Film formation apparatus and method of manufacturing semiconductor device (2022-03-22),

Kyoto Institute of Technology (KIT) is a prestigious technical university located in Kyoto, Japan. With a focus on innovation and creativity, KIT offers a wide range of undergraduate and graduate programs in engineering, architecture, and design. The institute is known for its cutting-edge research facilities and renowned faculty members. KIT is committed to providing students with a comprehensive education that prepares them for success in the global workforce.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

70 Patents

#42 in Kyoto 615-0031

#1,372 in Japan

#10,199 in the World

Kyoto Institute of Technology

Forward Citations = 82

152 inventors:

Masahiro Yoshimoto (11 out of 11 patents)

Tatsuji Nagaoka (10 out of 27 patents)

Hiroyuki Nishinaka (10 out of 10 patents)

4. Yoichi Kumada (10 out of 10 patents)

5. Yasuhiro Awatsuji (6 out of 6 patents)

Please report any incorrect information to support@idiyas.com

Loading…