The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Apr. 27, 2020
Tatsuji Nagaoka, Nagakute, JP;
Hiroyuki Nishinaka, Kyoto, JP;
Masahiro Yoshimoto, Kyoto, JP;
Daisuke Tahara, Kyoto, JP;
Tatsuji Nagaoka, Nagakute, JP;
Hiroyuki Nishinaka, Kyoto, JP;
Masahiro Yoshimoto, Kyoto, JP;
Daisuke Tahara, Kyoto, JP;
DENSO CORPORATION, Kariya, JP;
NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY, Kyoto, JP;
Abstract
A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.