The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Feb. 07, 2020
Applicants:

Tatsuji Nagaoka, Toyota, JP;

Hiroyuki Nishinaka, Kyoto, JP;

Masahiro Yoshimoto, Kyoto, JP;

Inventors:

Tatsuji Nagaoka, Nagakute, JP;

Hiroyuki Nishinaka, Kyoto, JP;

Masahiro Yoshimoto, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 21/784 (2006.01); H01L 29/872 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0692 (2013.01); H01L 21/784 (2013.01); H01L 29/24 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01);
Abstract

A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.


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