Meijo University

Asahi Kasei Kabushiki Kaisha

Toyoda Gosei Co., Ltd.

Koito Manufacturing Company, Ltd.

Stanley Electric Co., Ltd

Kyoto Institute of Technology

Soko Kagaku Co., Ltd.

El-Seed Corporation

Melio University

Motoaki Iwaya

Isamu Akasaki

Satoshi Kamiyama

Tetsuya Takeuchi

Hiroshi Amano

Kazuyoshi Iida

Kosuke Sato

Toshiyuki Kondo

Akira Yoshikawa

Fumiharu Teramae

Masaki Oya

Atsushi Suzuki

Koji Okuno

Hiroyuki Kinoshita

Takanobu Akagi

Tsukasa Kitano

Ryo Nakamura

Masahiro Yoshimoto

Tomohiro Morishita

Kazuhiro Nagase

Naoki Sone

Sho Iwayama

Koichi Mizutani

Saki Ushida

Takuya Nishimura

Lu Weifang

Kenjo Matsui

Hisanori Kojima

Yuka Kuwano

Shinji Yasue

Toshiki Yasuda

Daisuke Komori

Kaku Takarabe

Yuya Ogino

Hideki Kasugai

To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Semiconductor device and method for producing semiconductor device

Provided is a nitride semiconductor element that does not cause element breakdown even when driven at high current density. A nitride semiconductor element includes an active layer, an electron block layer formed above the active layer, an AlGaN layer formed on the electron block layer, and a cover layer covering an upper surface of the AlGaN layer and formed of AlGaN or GaN having a lower Al composition ratio than in the AlGaN layer, in which the AlGaN layer includes protrusions provided on a surface opposite to the active layer, and the cover layer covers the protrusions. The AlGaN layer is preferably formed of AlGaN having an Al composition ratio decreasing in a direction away from the active layer, and the protrusions preferably have a frustum shape.

Nitride semiconductor element

Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Semiconductor light emitting device and manufacturing method of semiconductor light emitting device

This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlGaN and a composition change layer made above the nitride semiconductor active layer and made of AlGaN in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer. The composition change layer has a first composition change region having a thickness larger than 0 nm and smaller than 400 nm and a second composition change region which is a region further away from the nitride semiconductor active layer than the first composition change region and in which the change rate of the Al composition ratio x3 in the thickness direction of the film thickness of the composition change layer is higher than that of the first composition change region, in which, in the first composition change region, the Al composition ratio continuously changes in the thickness direction of the film thickness.

To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Group III nitride semiconductor light-emitting device and production method therefor

A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 1&#xd7;10pieces to 1&#xd7;10pieces per cm. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference &#x394;H between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.

Nitride semiconductor substrate and method for manufacturing same

Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer has a higher Al composition than a second semiconductor layer. A first composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a group III element face side of the first semiconductor layer, the first composition-graded layer being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer. A second composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a nitride face side of the first semiconductor layer. The second composition-graded layer is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer.

Nitride semiconductor multilayer film reflector and light-emitting device using the same

An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlGaN (0.4&#x2264;X&#x2264;0.90). The second nitride semiconductor layer contains AlGaN with a film thickness t (nm) satisfying 5&#x2264;t&#x2264;25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy &#x2212;0.009&#xd7;t+X+0.22&#x2212;0.03&#x2264;Y&#x2264;&#x2212;0.009&#xd7;t+X+0.22+0.03.

MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving device

A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

Nitride semiconductor light-emitting device with periodic gain active layers

This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region (A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer. In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer, and a p-type GaN crystal layer with low electric resistance can be obtained.

Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device

A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.

Nitride semiconductor light emitting device and method of fabricating the same

An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (), and first and second composition-graded layers (). The active layer () is interposed between the first and second composition-graded layers (). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers () comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

Nitride semiconductor light-emitting device

A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layerconsisting of single crystal 6H-type SiC of porous state is formed on a SiC substrateof a light emitting diode element. Visible light is created from blue color to green color when the porous layeris excited by ultra violet light emitted from the nitride semiconductor layer.

Light emitting diode element with porous SiC emitting by donor acceptor pair

A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.

Method for manufacturing semiconductor device

A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

Growing community of inventors

Nagoya, Japan

Motoaki Iwaya