The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Mar. 26, 2010
Satoshi Kamiyama, Aichi, JP;
Motoaki Iwaya, Aichi, JP;
Hiroshi Amano, Aichi, JP;
Isamu Akasaki, Aichi, JP;
Takuya Nishimura, Aichi, JP;
Fumiharu Teramae, Aichi, JP;
Toshiyuki Kondo, Aichi, JP;
Satoshi Kamiyama, Aichi, JP;
Motoaki Iwaya, Aichi, JP;
Hiroshi Amano, Aichi, JP;
Isamu Akasaki, Aichi, JP;
Takuya Nishimura, Aichi, JP;
Fumiharu Teramae, Aichi, JP;
Toshiyuki Kondo, Aichi, JP;
MEIJO UNIVERSITY, Nagoya-Shi, Aichi, JP;
Abstract
A light emitting diode is provided which can obtain emission at the shorter wavelength side of the emission range of normal 6H-type SiC doped with B and N. A porous layerconsisting of single crystal 6H-type SiC of porous state is formed on a SiC substrateof a light emitting diode element. Visible light is created from blue color to green color when the porous layeris excited by ultra violet light emitted from the nitride semiconductor layer.