The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Aug. 23, 2010
Satoshi Kamiyama, Aichi, JP;
Motoaki Iwaya, Aichi, JP;
Hiroshi Amano, Aichi, JP;
Isamu Akasaki, Aichi, JP;
Toshiyuki Kondo, Aichi, JP;
Fumiharu Teramae, Aichi, JP;
Tsukasa Kitano, Aichi, JP;
Atsushi Suzuki, Aichi, JP;
Satoshi Kamiyama, Aichi, JP;
Motoaki Iwaya, Aichi, JP;
Hiroshi Amano, Aichi, JP;
Isamu Akasaki, Aichi, JP;
Toshiyuki Kondo, Aichi, JP;
Fumiharu Teramae, Aichi, JP;
Tsukasa Kitano, Aichi, JP;
Atsushi Suzuki, Aichi, JP;
El-Seed Corporation, Nagoya-Shi, Aichi, JP;
Abstract
A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.