The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Dec. 01, 2015
Meijo University, Nagoya-shi, Aichi, JP;
Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;
Kenjo Matsui, Nagoya, JP;
Tetsuya Takeuchi, Nagoya, JP;
Motoaki Iwaya, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Takanobu Akagi, Tokyo, JP;
Sho Iwayama, Tokyo, JP;
MEIJO UNIVERSITY, Nagoya-Shi, Aichi, JP;
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Abstract
A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.