The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jan. 21, 2022
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Meijo University, Nagoya, JP;
Koji Okuno, Kiyosu, JP;
Koichi Mizutani, Kiyosu, JP;
Masaki Oya, Kiyosu, JP;
Kazuyoshi Iida, Kiyosu, JP;
Satoshi Kamiyama, Nagoya, JP;
Tetsuya Takeuchi, Nagoya, JP;
Motoaki Iwaya, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Meijo University, Nagoya, JP;
Abstract
To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.