The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Mar. 03, 2020
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Kosuke Sato, Tokyo, JP;
Motoaki Iwaya, Nagoya, JP;
Shinji Yasue, Nagoya, JP;
Yuya Ogino, Nagoya, JP;
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Abstract
This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlGaN and a composition change layer made above the nitride semiconductor active layer and made of AlGaN in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer. The composition change layer has a first composition change region having a thickness larger than 0 nm and smaller than 400 nm and a second composition change region which is a region further away from the nitride semiconductor active layer than the first composition change region and in which the change rate of the Al composition ratio x3 in the thickness direction of the film thickness of the composition change layer is higher than that of the first composition change region, in which, in the first composition change region, the Al composition ratio continuously changes in the thickness direction of the film thickness.