The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Apr. 08, 2016
Applicant:
Meijo University, Nagoya-shi, Aichi, JP;
Inventors:
Tetsuya Takeuchi, Nagoya, JP;
Daisuke Komori, Nagoya, JP;
Kaku Takarabe, Nagoya, JP;
Motoaki Iwaya, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Assignee:
MEIJO UNIVERSITY, Nagoya-Shi, Aichi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/325 (2013.01); H01L 33/12 (2013.01);
Abstract
A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.