The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Nov. 08, 2018
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Meijo University, Nagoya, JP;
Tetsuya Takeuchi, Nagoya, JP;
Satoshi Kamiyama, Nagoya, JP;
Motoaki Iwaya, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Hisanori Kojima, Nagoya, JP;
Toshiki Yasuda, Nagoya, JP;
Kazuyoshi Iida, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu, JP;
MEIJO UNIVERSITY, Nagoya, JP;
Abstract
To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.