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Research Development Corporation

USPTO Granted Patents = 44

% Expired Patents = 2.3

Forward Citations = 793

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81 inventors (with patents filed for the assignee):

Junichi Nishizawa (5 out of 48 patents)

John J Osborn (4 out of 14 patents)

Toshiro Higuchi (3 out of 53 patents)

4. Jun-ichi Nishizawa (3 out of 162 patents)

5. Kaoru Motoya (3 out of 6 patents)

6. Yutaka Harada (2 out of 27 patents)

7. Eiichi Goto (2 out of 17 patents)

8. Toru Kurabayashi (2 out of 7 patents)

9. Bharat B Aggarwal (2 out of 26 patents)

10. Nobuaki Manada (2 out of 2 patents)

11. Junji Ito (2 out of 5 patents)

12. Akira Inoue (1 out of 129 patents)

13. Isamu Akasaki (1 out of 45 patents)

14. Hitoshi Yamaguchi (1 out of 22 patents)

15. Hirofumi Minami (1 out of 19 patents)

Core Competencies:

Epitaxial Growth

Semiconductor Laser Diode

X-ray Microscope

Chemical Compound Crystal

Precision Assembly

Magneto-Optical Recording

Ultrafine Particles

Organic Nonlinear Material

Static Induction Transistor

Humidity Detection

Gas Flow Sensing

Magnetic Powder

44 patents: Sort by Forward Citations

1. 6998383 - Inhibitors of receptor activator of NF-κB and uses thereof (2006-02-14),

2. 6017630 - Ultrafine particle and production method thereof, production method of (2000-01-25),

3. 5953166 - Laser trapping apparatus (1999-09-14),

4. 5879943 - Humidity detection method (1999-03-09),

5. 5840095 - Method and apparatus for producing flat metal powder directly from melt (1998-11-24),

6. 5824636 - Antiproliferative protein from Bacillus thuringiensis var. thuringiensis (1998-10-20),

7. 5790627 - Method and apparatus for observing a specimen using an X-ray microscope (1998-08-04),

8. 5763111 - Electroluminescence element and process for fabricating same (1998-06-09),

9. 5583879 - Gallum nitride group compound semiconductor laser diode (1996-12-10),

10. 5534698 - Solid state surface evaluation methods and devices (1996-07-09),

11. 5525156 - Apparatus for epitaxially growing a chemical compound crystal (1996-06-11),

12. 5463977 - Method of and apparatus for epitaxially growing chemical compound crystal (1995-11-07),

13. 5250148 - Process for growing GaAs monocrystal film (1993-10-05),

14. 5225577 - Organic nonlinear optical material (1993-07-06),

15. 5184072 - Apparatus for measuring weak static magnetic field using superconduction (1993-02-02),

Research Development Corporation, based in Tokyo, specializes in advanced technologies across various domains. The company focuses on the development and production of innovative solutions, including receptor activators of NF-kB, ultrafine particle production techniques, and laser trapping apparatus. Additionally, it is involved in humidity detection technologies, electroluminescence elements, and gallium nitride semiconductors. Its expertise extends to magneto-optical recording and microscopic multiprobes, positioning it as a key player in cutting-edge research and development.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

44 Patents

#864 in Tokyo

#1,861 in Japan

#15,727 in the World

Research Development Corporation

Forward Citations = 793

81 inventors:

Junichi Nishizawa (5 out of 48 patents)

John J Osborn (4 out of 14 patents)

Toshiro Higuchi (3 out of 53 patents)

4. Jun-ichi Nishizawa (3 out of 162 patents)

5. Kaoru Motoya (3 out of 6 patents)

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