The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1996
Filed:
Mar. 10, 1995
Nobuaki Manada, Taihaku-ku, Sendai-shi, Miyagi-ken, JP;
Junji Ito, Taihaku-ku, Sendai-shi, Miyagi-ken, JP;
Toru Kurabayashi, Taihaku-ku, Sendai-shi, Miyagi-ken, JP;
Jun-Ichi Nishizawa, Aoba-ku, Sendai-shi, Miyagi-ken, JP;
Research Development Corporation, all of, JP;
Other;
Abstract
An apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gases are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gases are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.